Dual 500 mA RETs from Nexperia enable high-power load switching in space constrained applications

Nexperia released a new series of 500 mA dual resistor equipped transistors (RET) in ultra-compact DFN2020(D)-6 packaging. These devices have been designed for load switching in wearables and smartphones as well as for use in digital circuits with higher power requirements. Such as space constrained computing, communications, industrial and automotive applications. Notably, the RET in DFN configuration achieves dual space-saving feats. First, by ingeniously integrating the bipolar junction transistor (BJT) and resistor into a singular package, it offers substantial board space savings. Moreover, the leadless DFN packaging itself contributes to spatial economy.

To reduce component count and simplify board design, the twelve new RETs combine dual BJTs with bias resistors integrated in the same package. They also include a second integrated resistor parallel to the base-emitter path to create a voltage divider that sets the base voltage. This offers finer tuning and better turn-off characteristic behavior. Since these internal resistors have higher tolerances than external resistors, RETs are suitable for switching applications where transistors operate in an on- or off-state, helping to overcome the temperature dependence of standard BJTs. They also help to reduce the costs associated with pick and place and manual handling (more info).