GaN Systems Releases New High Power IMS Evaluation Platform

GaN Systems announced the launch and availability of its Insulated Metal Substrate (IMS) Evaluation Platform, which provides a flexible, low cost, high power development platform for high-efficiency power systems with 3kW or higher applications. The IMS Evaluation Platform, in combination with GaNpx packaging technology and smart design techniques, enables power engineers to quickly take full advantage of GaN power transistors in designing smaller, lighter, lower cost, and more efficient power systems for data center, automotive, and energy storage system applications.

This evaluation platform consists of a motherboard (GSP65MB-EVB) and two IMS evaluation modules in half bridge and full bridge variants. The modules can be configured as a half-bridge (single IMS module) or a full bridge (two IMS modules) on the high-power motherboard. IMS evaluation modules are available in two power levels: 3kW (GSP65R25HB-EVB) and 6kW (GSP65R13HB-EVB). The IMS evaluation module includes GaN E-HEMTs, gate drivers, isolated DC/DC supply, DC bus decoupling capacitors, and a heatsink to form a fully functional half bridge power stage.