December 24, 2024 
Professional magazine and portal dedicated to electronics 
EPC announces the introduction of two new 40 V rated radiation-hardened GaN FETs. EPC7001 is a 40 V, 4 mΩ, 250 Apulsed, rad-hard GaN FET in a small 7 mm2 footprint. EPC7002 is a 40 V, 14.5 mΩ, 62 Apulsed, rad-hard GaN FET in a tiny 1.87 mm2 footprint. Both devices have a total dose radiation rating greater than 1,000K Rad(Si) and SEE immunity for LET of 83.7 MeV/mg/cm2 with Vds up to 100% of rated breakdown. These new devices, along with the rest of the Rad Hard family, are offered in a chip-scale package. Packaged versions are available from EPC Space.
EPC’s eGaN FETs and ICs offer a higher performing alternative to conventional rad hard silicon devices for high reliability and space applications. EPC’s Rad hard devices are significantly smaller, have 40 times better electrical performance, and lower overall cost than rad hard silicon devices. Moreover, EPC’s rad hard devices exhibit superior resistance to radiation, supporting higher total radiation levels and SEE LET levels compared to traditional silicon solutions (more info).
