New 600 V discrete IGBTs from Nexperia for class-leading efficiency in power applications

Nexperia launched its entry to the insulated gate bipolar transistor (IGBT) market with a range of 600 V devices, starting with the 30 A NGW30T60M3DF. By adding IGBTs to its extensive portfolio, Nexperia is addressing the growing demand for efficient, high-voltage switching devices with a range of performance and cost requirements. These enable higher power density in power conversion and motor drive applications, including industrial motor drives like servo motors ranging from 5 to 20 kW (20 kHz), robotics, elevators, operating grippers, in-line manufacturing, power inverters, uninterruptible power supply (UPS), photovoltaic (PV) strings, EV-charging, and induction heating and welding.

IGBT is a relatively mature technology. Nonetheless, the market for these devices is expected to grow in line with the increased adoption of solar panels and electric vehicle (EV) chargers. Nexperia's 600 V IGBTs feature a robust, cost-effective carrier-stored trench-gate advanced field-stop (FS) construction, providing exceptionally low conduction and switching loss performance with high levels of ruggedness in operating temperatures up to 175°C (more info).