Nexperia announced the release of its first 80 V and 100 V application-specific MOSFETs (ASFETs) for hotswap with enhanced safe operating area (SOA) in a compact 8x8 mm LFPAK88 package. These new ASFETs are fully optimized for demanding hotswap and soft-start applications and are qualified to 175°C for use in advanced telecom and computing equipment.
By applying decades of expertise in both advanced silicon and package development, Nexperia’s PSMN2R3-100SSE (100 V, 2.3 mΩ N-channel ASFET) is the leading addition in the portfolio, delivering low RDS(on) and strong linear-mode (safe operating area) performance in a compact 8x8 mm footprint, tailored to meet the requirements of demanding hotswap applications. Nexperia has also released PSMN1R9-80SSE (80 V, 1.9 mΩ), an 80 V ASFET which responds to the growing trend for using 48 V power rails in computing servers and other industrial applications where environmental conditions allow for MOSFETs with a lower BVDS rating.
Another innovation from Nexperia is that the new ASFETs for hotswap have fully characterized SOA at both 25 °C and 125 °C (more info).