200 V, 10 mΩ GaN FET Joins Family of Footprint Compatible QFN Packaged Devices for High Efficiency and Design Flexibility

EPC introduces the 200 V, 10 mΩ EPC2307 in a thermally enhanced QFN in a tiny 3 mm x 5 mm footprint. The EPC2307 is footprint compatible with the previously released 100 V, 1.8 mΩ EPC2302, the 100 V, 3.8 mΩ EPC2306, the 150 V, 3 mΩ EPC2305, the 150 V, 6 mΩ EPC2308, and the 200 V, 5 mΩ EPC2304 allowing designers to trade off RDS(on) vs. price to optimize solutions for efficiency or cost by dropping in a different part number in the same PCB footprint.

The devices feature a thermally enhanced QFN package with exposed top. The extremely small thermal resistance improves heat dissipation through a heatsink or heat spreader for excellent thermal behavior, while wettable flanks simplify assembly, and footprint compatibility offers design flexibility to specs change for fast time to market.

This family of devices bring several benefits to motor drive designs including very short deadtimes for high motor + inverter system efficiency, lower current ripple for reduced magnetic loss, lower torque ripple for improved precision, and lower filtering for lower cost.

For DC-DC conversion applications, these devices offer up to five times higher power density, excellent heat dissipation, and lower system costs in both hard switching and soft switching designs. Additionally, ringing and overshoot are both significantly reduced for better EMI (more info).