Lowest On-resistance 150 V and 200 V GaN Transistors on the Market Now Shipping from EPC

EPC introduces the 150 V, 3 mΩ EPC2305 and the 200 V, 5 mΩ EPC2304 GaN FETs in a thermally enhanced QFN package with exposed top and tiny 3 mm x 5 mm footprint.

These devices are the lowest on-resistance (RDS(on)) FETs in the market at 150 V and 200 V in a size that is fifteen times smaller than alternative Si MOSFETs. In addition to offering devices with half the on-resistance and fifteen times smaller, QG, QGD, QOSS are more than three times smaller than Si MOSFETs and the reverse recovery charge (QRR), is zero. These characteristics result in switching losses that are six times smaller in both hard switching and soft switching applications.  The driver losses are three times less than silicon solutions and ringing and overshoot are both significantly reduced.

For sinusoidal BLDC motor drives, these devices enable < 20 ns deadtime and higher frequency to reduce noise, minimize size to allow for integration with the motor, reduce the input filter and eliminate the electrolytic capacitors, and increase motor + driver efficiency more than 8% by eliminating vibrations and distortions. This makes them ideal for forklift, escooter, eMobility, robots, and power tool motor drives (more info).