April 19, 2024 
Professional magazine and portal dedicated to electronics 
EPC expands the selection of off-the-shelf GaN FETs in thermally enhanced QFN packages with the introduction of the 150 V EPC2308 designed for motor drive in power tools and robots, high density DC-DC from/to 80 V-100 V for industrial applications, synchronous rectification to 28 V – 54 V for chargers, adaptors and power supplies, smartphones USB fast chargers, and in solar optimizers and microinverters.
The EPC2308 GaN FET offers a super small RDS(on), of just 4.9 mOhm typical, together with very small Qg, Qgd, and Qoss parameters for low conduction and switching losses. The device features a thermally enhanced QFN package with footprint of just 3 mm x 5 mm, offering an extremely small solution size for the highest power density applications.
The package offers wettable flanks to simplify assembly and inspection and exposed top and ultra-low thermal resistances to optimize thermal dissipation through heatsink for cooler operations.
The EPC2308 is footprint compatible with the previously released 100 V, 1.8 mOhm EPC2302 and the 100 V, 3.8 mOhm EPC2306 (more info).
