January 02, 2025 
Professional magazine and portal dedicated to electronics The Smallest 40 V, 1.1 mΩ FET in the World from EPC Enables State-of-the-Art Power Density
Efficient Power Conversion Corporation expands the selection of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2066 (0.8 mΩ typical, 40 V) GaN FET.
The low losses and small size of the EPC2066 makes it the ideal switch for the secondary side of high power density 40 V – 60 V to 12 V DC-DC converters for the latest servers and artificial intelligence. It is also ideal for the secondary side synchronous rectification to 12V in power supply and silver box data center servers, and for high density motor drive applications from 24V – 32V. The high frequency operation, high efficiency, and an ultra-small 13.9 mm2 footprint of the GaN FET combine for state-of-the-art power density.
The EPC2066 is footprint compatible with EPC’s prior Generation 4 product, the EPC2024. The Generation 5 improvement in Area x RDS(on) gives the EPC2066 a 27% reduction in on-resistance in the same area (more info).
