January 07, 2025 
Professional magazine and portal dedicated to electronics EPC Introduces 350 V GaN Power Transistor − 20 Times Smaller Than Comparable Silicon and Lower Cost
EPC announces the production release of the EPC2050, a 350 V GaN transistor with a maximum RDS(on) of 80 mΩ and a 26 A pulsed output current. The EPC2050 measures just 1.95 mm x 1.95 mm. This tiny size enables power solutions that occupy ten times less area than comparable silicon solutions.
Applications benefiting from the fast-switching speed and tiny size of the EPC2050 include DC-DC conversion from/to 120 V-160 V such as in aerospace applications, 120 V-150 V motor control for medical motors, DC-AC inverters, multi-level converters such as Totem Pole PFC and DC-DC solutions converting 400 V input to 12 V, 20 V or 48 V outputs. Additional applications include fast chargers, battery management systems, electric vehicle charging, solar power inverters, high power lidar for autonomous cars and delivery vehicles, LED lighting, RF switches, and consumer & industrial wirings like wall-mounted sockets and Class D Audio (more info).
