65 A ePower Chipset from EPC Redefines Power Conversion

17.01. 2022 | News
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EPC announces the introduction of a 100 V, 65 A integrated circuit chipset designed for 48 V DC-DC conversion used in high-density computing applications and in 48 V BLDC motor drives for e-mobility, robotics, and drones. The EPC23101 eGaN IC plus EPC2302 eGaN FET offers a new ePower Chipset capable of a maximum withstand voltage of 100 V, delivering up to 65 A load current, while capable of switching speeds greater than 1 MHz.

Key features of the EPC23101 integrated circuit using EPC’s proprietary GaN IC technology include integrated 3.3 mOhm RDS(on) high side FET with gate driver, input logic interface, level shifting, bootstrap charging, gate drive buffer circuits and gate driver output to drive external low side eGaN FET. The EPC2302 eGaN FET offers a super small RDS(on), of just 1.8 mOhm, together with very small QG, QGD, and QOSS parameters for low conduction and switching losses.

Both devices feature a thermally enhanced QFN package with exposed top with optimized pinout between the two devices. The combined chipset footprint, is 7 mm x 5 mm, offering an extremely small solution size for the highest power density applications (more info).

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