Power supplies in space applications operate in environments that require enhanced radiation technology to withstand extreme particle interactions and solar and electromagnetic events. These events degrade space-based systems and disrupt operations. To meet this requirement, Microchip Technology Inc. announced the qualification of its M6 MRH25N12U3 radiation-hardened 250V, 0.21 Ohm Rds(on), metal–oxide–semiconductor field-effect transistor (MOSFET) for space applications.
Microchip’s radiation-hardened M6 MRH25N12U3 MOSFET provides the primary switching element in power conversion circuits including point-of-load converters, DC-DC converters, motor drives and controls and general-purpose switching.
The device can withstand total ionizing dose (TID) up to 100 krad and 300 krad and single event effects (SEE) with linear energy transfer (LET) up to 87 MeV/mg/cm2. It provides 100-percent wafer lot radiation hardness assurance in validation tests (more info).