Power Integrations’ SCALE-iDriver for SiC MOSFETs Achieves AEC-Q100 Automotive Qualification

Power Integrations announced that its SIC118xKQ SCALE-iDriver™, a high-efficiency, single-channel gate driver for silicon carbide (SiC) MOSFETs, is now certified to AEC-Q100 for automotive use. Devices can be configured to support gate-drive voltage requirements of commonly used SiC MOSFETs and feature sophisticated safety and protection features.

The SIC1182KQ (1200 V) and SIC1181KQ (750 V) SCALE-iDriver devices are optimized for driving SiC MOSFETs in automotive applications, exhibiting rail-to-rail output, fast gate switching speed, unipolar supply voltage supporting positive and negative output voltages, integrated power and voltage management and reinforced isolation. Critical safety features include Drain to Source Voltage (VDS) monitoring, SENSE readout, primary and secondary Undervoltage Lock-out (UVLO), current-limited gate drive and Advanced Active Clamping (AAC) which facilitates safe operation and soft turn-off under fault conditions. AAC in combination with VDS monitoring ensures safe turn-off in less than 2 µs during short-circuit conditions (more info, graphic: Business Wire).