Automotive Qualified eGaN FETs Help Lidar Systems ‘See’ Better

EPC announces successful AEC Q101 qualification of two additional eGaN devices, addressing a range of applications in the automotive industry and other harsh environments. The new products, EPC2206, and EPC2212 are both discrete transistors in wafer level chip-scale packaging (WLCS) with 80 Vds and 100 Vds ratings respectively.

eGaN technology has been in mass production for over eight years, accumulating billions of hours of successful field experience in automotive applications, such as lidar (Light Detection and Ranging) and radar for autonomous cars, 48 V – 12 V DC-DC converters used in data center computers, ultra-high fidelity infotainment systems, and high-intensity headlamps for trucks. These new devices have completed rigorous automotive AEC Q101 qualification testing and will be followed with several more discrete transistors and integrated circuits designed for the harsh automotive environment.

The EPC2206 is an 80 V, 2.2 mΩ enhancement-mode FET with a pulsed current rating of 390 A in a 6.1mm x 2.3mm chip-scale package. The EPC2212 is a 100 V, 13.5 mΩ component with a pulsed current rating of 75 A in a 2.1mm x 1.6mm chip-scale package. These eGaN FETs are many times smaller and achieve switching speeds 10 – 100 times faster than their silicon MOSFET counterparts (more info).