EPC Introduces 100 V eGaN Power Transistor – 30 Times Smaller Than Comparable Silicon

Efficient Power Conversion (EPC) announces the EPC2051, a 100 V GaN transistor with a maximum RDS(on) of 25 mΩ and a 37 A pulsed output current for high efficiency power conversion in a tiny 1.1mm2 footprint.

Applications demanding higher efficiency and power density no longer have to choose between size and performance. The EPC2051 measures just 1.30 mm x 0.85 mm. Despite the small footprint, operating in a 50 V – 12 V buck converter, the EPC2051 achieves 97% efficiency at a 4 A output while switching at 500 kHz. In addition, the low cost of the EPC2051 brings the performance of GaN FETs at a price comparable to silicon MOSFETs.  Applications benefiting from this performance, small size, and low cost include 48 V input power converters for computing and telecom systems, LiDAR, LED Lighting, and Class-D audio.

The EPC9091 development board is a 100 V maximum device voltage, half bridge  featuring the EPC2051, and the UP1966A gate driver from uPI Semiconductor.  This 2” x 2” (50.8 mm x 50.8 mm) board is designed for optimal switching performance and contains all critical components for easy evaluation of the 100 V EPC2051 eGaN FET (more info).