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Complete Full-Bridge SiP from ST Includes MOSFETs, Gate Drivers, and Protection to Simplify Design

15.01. 2018 | News
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STMicroelectronics’ PWD13F60 System-in-Package (SiP) contains a complete 600V/8A single-phase MOSFET full bridge in a 13mm x 11mm outline, saving bill-of-materials costs and board space in industrial motor drives, lamp ballasts, power supplies, converters, and inverters.

With a footprint 60% smaller than a comparable circuit built from discrete components, the PWD13F60 can also boost end-application power density. By integrating four power MOSFETs, it presents a uniquely efficient alternative to other modules on the market that are typically dual-FET half-bridge or six-FET three-phase devices. Unlike either of these choices, only one PWD13F60 is needed to implement a single-phase full bridge, leaving no internal MOSFETs unused. There is also flexibility to configure the module as one full bridge or two half bridges.

The gate drivers are optimized for reliable switching and low EMI. Further attributes of the PWD13F60 include a wide supply-voltage range, extending down to 6.5V.

PWD13F60