August 04, 2026 
Professional magazine and portal dedicated to electronics Nexperia brings QDPAK packaging to 1200 V SiC MOSFETs to overcome thermal bottlenecks in high-power designs
Author: Jan Robenek
Nexperia announced the release of 1200 V silicon carbide (SiC) MOSFETs in QDPAK packaging, extending its growing wide-bandgap (WBG) portfolio with a top-side cooled surface-mount package optimized for high-power density and thermally demanding applications. Designed for high-efficiency, high-voltage power conversion applications, these devices enable the electrical performance of Nexperia’s SiC technology with simplified thermal management and mechanical integration, enabling higher output power, increased efficiency and improved thermal performance in compact designs.
Available in both industrial-grade and automotive-qualified variants, the portfolio offers RDS(on) options of 17, 30, 40, 60 and 80 mΩ, delivering a scalable QDPAK platform for applications ranging from high-power systems to compact designs with demanding thermal and mechanical constraints. Complementing Nexperia’s existing package portfolio, QDPAK gives designers greater flexibility to optimize efficiency, power density and thermal performance (more info).
robenek@dps-az.cz
