STMicroelectronics’ new GaN semiconductors improve energy efficiency for high-demand applications

New gallium nitride (GaN)-based power semiconductors from STMicroelectronics are designed to improve efficiency and increase power density in high-demand applications that support electrification. The 700V PowerGaN devices in the STPOWER portfolio address challenges such as rising AI server power consumption and the need for higher-performance power conversion beyond the limits of conventional silicon technologies.

ST’s new PowerGaN devices deliver high efficiency and power density to high-voltage power supplies. Engineered for a 700V operating rating, they support reliable high-power operation and higher-frequency topologies. PowerGaN’s inherent advantages, including low conduction losses, very low switching loss at high operating frequencies, and zero reverse-recovery charge, enable reduced system size, weight, and operating temperature. These attributes are important for power semiconductors used in robotics, industrial power supplies, and smart-grid converters for energy generation, distribution, and storage.

The seven new GaN enhancement-mode transistors (HEMTs) now joining ST’s 700V PowerGaN series cover a wide range of continuous current ratings, from 6 A to 29 A, and typical RDS(on) from 53 mΩ to 270 mΩ. Also featuring ultra-low internal capacitances and low gate charge, inherent in GaN wide-bandgap technology, each has a Qg x RDS(on) figure of merit (FoM) significantly ahead of traditional silicon devices (more info).

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