Infineon CoolGaN™ BDS 40V G3 family delivers up to 82 percent footprint reduction for portable power designs

Infineon Technologies expands its CoolGaN™ BDS 40 V G3 bidirectional switch (BDS) family with two new devices, the IGK048B041S and IGK120B041S. The new additions reduce PCB footprint by up to 82 percent and cut component count in half. For engineers designing within the strict spatial constraints of modern smartphones, notebooks, and wearables, this is a significant and quantifiable step forward. Targeting compact consumer devices, the new devices give power system designers greater flexibility to optimize efficiency and streamline designs without sacrificing performance.

The BDS, like other GaN devices, is compatible with 5 V gate drive. Offered in WLCSP chip-scale packages measuring 2.1 × 2.1 mm² and 1.7 × 1.2 mm², the IGK048B041S and IGK120B041S are engineered for the tight spatial constraints of smartphones, notebooks and wearables. The larger GaN device achieves 4.2 mΩ Rdd(on) while the smaller device delivers 9 mΩ Rdd(on). The CoolGaN BDS devices further distinguish themselves through superior switching and leakage performance. Gate charge is up to approximately 40 percent lower than comparable competing devices. Lower gate charge translates directly to faster switching transitions, reduced switching losses, and improved system efficiency in fast-charging applications. Additionally, Drain-Drain Leakage current is more than 85 percent lower than competing solutions, underscoring the inherent leakage advantages of GaN technology. Together, these characteristics reduce thermal rise, supporting long-term reliability and helping manufacturers meet increasingly stringent safety requirements (more info).

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