100V Integrated GaN Power Stages optimized for motor drives with Improved Control and Protection

Efficient Power Conversion (EPC) has introduced a new generation of 100 V integrated GaN power-stage ICs - EPC23108, EPC23109, EPC23110 and EPC23111 - targeting high-performance motion and power systems such as humanoid robots, drones, and other compact battery-powered platforms. The devices are designed to simplify implementation and improve operational robustness in real-world environments while preserving the efficiency and power-density advantages typical of integrated GaN technology.

Each IC integrates the high-side and low-side eGaN^® FETs together with the gate driver and level shifting circuitry in a thermally enhanced QFN package. They support operation up to 100 V, with load current capability of 35 A (EPC23108, EPC23109) and 20 A (EPC23110, EPC23111), enabling reliable high-frequency switching performance.

The control interface has an active-low fast-shutdown and standby input with a built-in 65 kΩ pull-up, which makes it work with industrial logic standards. As a result, designers can connect the devices directly to standard controllers without having to do any extra signal conditioning. This makes the design easier and makes sure that the devices work the same way on all platforms (more info).

robenek@dps-az.cz