EPC Launches Its First Seventh-Generation eGaN Power Transistor, the 40 V EPC2366, into Mass Production

Efficient Power Conversion (EPC) announces the start of volume production of the EPC2366, the first of its seventh-generation (Gen 7) eGaN^® family of power transistors. This seventh-generation platform delivers a new state-of-the art in transistor performance. EPC2366 delivers up to 3× better performance than equivalent silicon MOSFETs.

With a typical Rds(on) of 0.84 mΩ and a highly optimized Rds(on) × Qg figure of merit (FoM) of 12.6 mΩ.nC, it simultaneously cuts conduction and switching losses while improving thermal performance. Engineered for high-efficiency, high-density power systems, the device excels in synchronous rectification, high-density DC-DC conversion, AI server power supplies, and advanced motor drives.

It supports drain-to-source voltages up to 40 V and transient voltages up to 48 V, with continuous drain currents up to 88 A and pulsed currents of 360 A, making it well suited for the most demanding power systems. The device is thermally optimized for high power density thanks to its small 3.3 × 2.6 mm PQFN package with a thermal resistance from the junction to the case of 0.6 °C/W (more info).

robenek@dps-az.cz