Nexperia extends low RDS(on) MOSFET performance with the release of its 0.57 mΩ product in LFPAK56

10.02. 2020 | News
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Nexperia announced the release of its lowest-ever RDS(on) power MOSFET. The PSMNR51-25YLH sets a new standard of 0.57 mΩ at 25 V. Utilising Nexperia’s unique NextPowerS3 technology, this market-leading performance is offered without compromising other important parameters such as maximum drain current (ID(max)), Safe Operating Area (SOA) or gate charge QG.

Very low RDS(on) devices are required in many applications such as ORing, hot-swap operation, synchronous rectification, motor control and battery protection, to reduce I²R losses and increase efficiency. However, some competing devices with similar RDS(on) values suffer from reduced SOA – a measure of the ruggedness of the MOSFET – and reduced ID(max)) ratings due to shrinking cell-pitches. Nexperia’s PSMNR51-25YLH MOSFET offers a maximum drain current rating up to 380 Amps. Some competitors provide only computed ID(max) whereas Nexperia demonstrates continuous current capability up to 380 Amps (more info).

PSMNR51-25YLH

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